Aluminium Nitride vs Silicon Carbide Plates: Thepa, Likopo & Liphapang tsa Bohlokoa

Kenyelletso e Akaretsang ea Alumina Plate le Silicon Carbide Plate

Poleiti ea Aluminium Nitride ke poleiti e sebetsang ea ceramic e entsoeng ka liseramike tsa Aluminium Nitride (AlN). Nitride ea aluminium ke motsoako oa covalent bond o nang le sebopeho sa kristale ea hexagonal 'me ke thepa e tsoetseng pele ea ceramic e nang le ts'ebetso e ntle haholo. Ka bongata ba khopolo-taba ea 3.26 g/cm³, e kopanya conductivity e phahameng ea mocheso oa tšepe le insulation le khanyetso e phahameng ea liseramike, e leng se etsang hore e be thepa e loketseng bakeng sa ho paka ka elektroniki.

Lipoleiti tsa silicon carbide li entsoe ka lirafshoa tsa silicon carbide (SiC). Silicon carbide e teng ka mefuta e fapaneng ea kristale (mohlala, α-SiC, β-SiC) 'me e tšeloa ho etsa 'mele o teteaneng oa ceramic. Boima ba eona ke hoo e ka bang 3.1-3.2 g/cm³, e e beha sehlopheng sa lisebelisoa tsa ceramic tsa mocheso o phahameng haholo, tse khetholloang ka ho thatafala ho feteletseng, ho hanyetsa ho apara, le botsitso ba lik'hemik'hale, tse hlahisang ts'ebetso e tsotehang libakeng tse feteletseng.

Phapang lipakeng tsa litšobotsi tsa poleiti ea alumina le poleiti ea silicon carbide

Thermal conductivity le insulation

Aluminium nitride plate: thermal conductivity e phahameng ho 200-320 W / m・ K, haufi le tšepe ea aluminium, lisebelisoa tsa ceramic ka mokhoa o motle ka ho fetisisa oa mocheso oa mofuta o mong oa mefuta; ka nako e ts'oanang, e na le ts'ebetso e ntle haholo ea motlakase (dielectric constant ea hoo e ka bang 9.1, volume resistivity> 10¹⁴ Ω・cm) ho fihlela litlhoko tse peli tsa lisebelisoa tse matla a phahameng, ho senya mocheso le ho pata.

Silicon carbide plate: thermal conductivity of about 100-200 W/m・K, leha e le tlase ho feta aluminium nitride, empa e betere ho feta lirafshoa tse ngata; thepa ea eona e sireletsang e nang le mofuta oa kristale le liphetoho tsa bohloeki, karolo ea doped silicon carbide e ka sebelisoa e le lisebelisoa tsa semiconductor (tse kang SiC power device substrate), empa li-ceramics tse sa koaloang li ntse li le li-insulators (volume resistivity> 10¹² Ω・cm).

Ho hanyetsana le Mocheso o Phahameng le Thepa ea Mechini

Aluminium nitride plate: ho qhibiliha hoo e ka bang 2200 ° C, ho hanyetsa oxidation e ntle ka mocheso o phahameng, empa matla a mochine oa mocheso a eketseha ka ho theoha ka potlako; ho thatafala (HV) hoo e ka bang 1200-1500, ho hanyetsa mocheso oa mocheso ho bohareng (mocheso oa ho atolosa mocheso oa 4.5 × 10-⁶ / ° C, le chip e thehiloeng ka silicon e nang le papali e ntle).

Silicon carbide plate: sebaka se qhibilihang se fihlang ho 2700 ° C, ho hanyetsa kutu (asiti, alkali, khoholeho ea tšepe e qhibilihang); boima (HV) ea 2500-3000, ea bobeli ho daemane; compressive matla a fetang 4000 MPa, le phahameng matla a ho boloka sekhahla ka mocheso phahameng (1400 ° C ha matla a 80% ea mocheso kamoreng); tekanyo e tlaase ea ho atolosoa ha mocheso (2.5-4.0 × 10-⁶ / ° C, ho tšoana hantle le silicon chip. Coefficient e tlase ea ho atolosoa ha mocheso (2.5-4.0 × 10.0⁶ / ° C), ho hanyetsa mocheso o babatsehang oa mocheso.

Ho tsitsa ha lik'hemik'hale le ts'ebetso

Aluminium nitride plate: e bonts'a khanyetso e matla ho khoholeho ea tšepe e qhibilihisitsoeng (joalo ka aluminium le koporo) empa e na le tšekamelo ea ho lieha ho etsa hydrolysis ka metsi, e hlahisang Al(OH) ₃. Ka hona, ho hlokahala phekolo ea mongobo. Ho sebetsa ho hloka tšebeliso ea lisebelisoa tsa daemane, e leng bothata bo bohareng.

Silicon carbide plate: e hanyetsanang le acid e matla, alkalis, le oxidation e phahameng ea mocheso, e hanyetsanang le khoholeho e matla ea tšepe. E na le boima bo phahameng haholo, bo hlokang li-abrasives tsa taemane tsa boleng bo holimo 'me e kenya litšenyehelo tse phahameng.

Phapang ea kopo lipakeng tsa poleiti ea alumina le poleiti ea silicon carbide

Sebaka sa elektronike le matla

Aluminium nitride plate: haholo-holo e sebelisetsoang lisebelisoa tsa elektronike tse matla, mocheso o chesang mocheso (joalo ka 5G base station amplifier module, IGBT insulating substrate), bracket ea LED chip heat dissipation bracket, semiconductor packaging shell, joalo-joalo, tšebeliso ea "thermal conductivity - insulation" litšoaneleho tse peli-optimal ho rarolla mathata a tsamaiso.

Silicon carbide plate: e le thepa e tala ea SiC semiconductor substrate material (4H-SiC wafers), e tšehetsang nts'etsopele ea moloko oa boraro oa semiconductor e pharaletseng; e ka boela ea sebelisoa bakeng sa mochine oa mocheso oa mocheso o phahameng oa mocheso oa motlakase, empa o hloka ho tsamaisana le lera la ho kenya letsoho.

Mehaho ea mocheso o phahameng le masimo a indasteri

Aluminium nitride plate e sebelisoa sebakeng sa aerospace bakeng sa likarolo tsa mocheso o phahameng oa mocheso ka kamoreng ea enjene (joaloka li-brackets tsa sensor), empa ts'ebeliso ea eona e lekanyelitsoe ke matla a eona a phahameng a mocheso.

Silicon carbide plate: e sebelisoang haholo indastering ea metallurgical (mohlala, ho phatloha ha sebōpi sa sebōpi, tanka ea mokelikeli oa aluminium), indasteri ea lik'hemik'hale (lesela le thibelang ho senya sekontiri), sebaka sa matla (likarolo tsa kamore ea ho chesa turbine ea khase); ho phaella moo, e le lisebelisoa tse sa sebetseng tse sebelisoang ka li-ceramic bearings, mehele ea ho tiisa, li-nozzles tsa sandblasting, joalo-joalo, ho nkela thepa ea tšepe sebaka bakeng sa ho lelefatsa bophelo.

Libaka tse Khethehileng

Aluminium Nitride Plates: E sebelisoa tšimong ea optical e le lisebelisoa tsa lifensetere tsa infrared (transmittance 8-12 μm) ho nka monyetla oa ho monya ha mongobo o tlaase le ho fetisa khanya e phahameng.

Lipoleiti tsa Silicon Carbide: Bakhethoa ba lisebelisoa tsa ho boloka mafura a nyutlelie tsa mocheso o phahameng oa mocheso indastering ea nyutlelie, ba sebelisa mahlaseli a eona le ho hanyetsa mocheso o phahameng; e sebelisoang indastering ea photovoltaic bakeng sa litataiso tsa ho seha ka silicon, e matlafatsang khanyetso ea eona ea abrasion.

Morekisi

RBOSCHCO ke mofani le moetsi oa lik'hemik'hale ea tšepahalang lefatšeng ka bophara ea nang le boiphihlelo ba lilemo tse fetang 12 ho faneng ka lik'hemik'hale tsa boleng bo holimo le lintho tse ling tse kang Nanomaterials. Khamphani e romela linaheng tse ngata, tse kang USA, Canada, Europe, UAE, Afrika Boroa, Tanzania, Kenya, Egepeta, Nigeria, Cameroon, Uganda, Turkey, Mexico, Azerbaijan, Belgium, Cyprus, Czech Republic, Brazil, Chile, Argentina, Dubai, Japane, Korea, Vietnam, Thailand, Malaysia, Indonesia, Australia, Jeremane, Fora, Italy, Portugal jj. Jwalo ka moetsi ea etellang pele nts'etsopele ea nanotechnology, RBOSCHCO e laola 'maraka. Sehlopha sa rona sa mosebetsi sa litsebi se fana ka litharollo tse phethahetseng ho thusa ho ntlafatsa katleho ea liindasteri tse fapaneng, ho theha boleng, le ho sebetsana habonolo le liphephetso tse fapaneng. Haeba u batla lipoleiti tsa aluminium nitride le silicon carbide, ka kopo romela imeile ho: [email protected]

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