Izici kanye Nokusetshenziswa kwe-Silicon Carbide Nanopowder

I-nanopowder ye-silicon carbide iyinto engaphili ene-silicon carbide (i-SiC, ifomula yamakhemikhali i-SiC) njengengxenye eyinhloko kanye nosayizi wezinhlayiya phakathi kwama-nanometer angu-1 no-100. Njengesigaba esiphezulu somndeni we-silicon carbide, inezinzuzo ezihlukile zezinto ze-nano kanye nezici ezingokwemvelo ze-silicon carbide. Isakhiwo sayo sekristalu ikakhulukazi siyi-cubic (3C-SiC, β – SiC) noma i-hexagonal (4H-SiC, 6H-SiC, α – SiC).

Izici eziyinhloko ze-silicon carbide nano powder

Ukuncintisana okuyinhloko kwe-silicon carbide nano powder kulele ekuthuthukisweni kokusebenza okulethwe "usayizi wayo wezinhlayiya ze-nano", ngenkathi izuza izici ezinhle kakhulu zezinto ze-silicon carbide uqobo, ukusebenza kwayo okuphelele kuphakeme kakhulu kunokwe-silicon carbide powder ejwayelekile, engahlukaniswa ngezici ezinhlanu ezilandelayo eziyinhloko, futhi kuyisihluthulelo sokuzivumelanisa nezimo eziningi eziphezulu.

1. Izici Zomzimba: Zinhle kakhulu futhi zihlanzekile kakhulu, zizinzile ngokwesakhiwo

Usayizi wezinhlayiya ze-silicon carbide nano powder uvame ukulawulwa phakathi kuka-30 no-100 nm. Eminye imikhiqizo ephezulu ingafinyelela ngaphansi kuka-30 nm, kanye nendawo ethile yobuso engu-70-90 m2/g. Izinhlayiya zisatshalaliswa ngokulinganayo futhi zihlakazeke kahle. Ngemva kokwelashwa kwe-hydroxylation noma i-coating surface, ikhono lokubopha i-interface lingathuthukiswa kakhulu ukuze kugwenywe ukuhlangana. Ubumsulwa bayo bungafinyelela ngaphezu kuka-99%, kanti ubumsulwa bemikhiqizo ephezulu bungafinyelela ngisho naku-99.9999%. Okuqukethwe okuphelele kokungcola kungu-≤ 1ppm, okugwema ngempumelelo ukuphazamiseka kokungcola ekusebenzeni kwe-substrate. Ngesikhathi esifanayo, ubuningi bayo bungu-3.22 g/ml, kanti ubulukhuni bayo be-Mohs bufinyelela ku-9.5, obuphakathi kwe-corundum nedayimane. Ubulukhuni bayo obuncane bungafinyelela ku-2840 ~ 3320kg/mm², okwenza kube yinto yokuqinisa esezingeni eliphezulu engagugi enesakhiwo sekristalu esizinzile futhi engathambekeli kakhulu ekuphazamisekeni kwe-lattice.

2. Izici zokushisa: ukumelana nokushisa okuphezulu, ukuqhuba kahle kokushisa okuhle kakhulu

Impuphu ye-silicon carbide nano inokumelana okukhulu kakhulu nokushisa okuphezulu. Indawo yayo yokuncibilika ifinyelela ku-2700 ℃, futhi izinga lokushisa layo lokubola lidlula u-2700 ℃. Ingasetshenziswa ngokuzinzile isikhathi eside endaweni enokushisa okuphezulu ngaphezu kuka-1600 ℃, ingcono kakhulu kunezinto ezivamile zensimbi neze-ceramic.

3. Izici zamakhemikhali: Ukungangeni kahle okunamandla kanye nokumelana nokugqwala okuvelele

Impuphu ye-silicon carbide nano inertia enamandla yamakhemikhali. Ingxenye yayo eyinhloko yi-silicon carbide (ifomula yamakhemikhali i-SiC), equkethe amabhondi e-covalent angu-88% kanye namabhondi e-ionic angu-12%. Akulula ukusabela ngama-acid aqinile, izisekelo eziqinile, izinsimbi ezincibilikisiwe kanye nemidiya eminingi yamakhemikhali, futhi inokumelana okuhle kokugqwala kanye nokumelana nokushiswa kwe-oxidation. Ngaphansi kwezimo ezingathathi hlangothi kanye ne-alkaline, inokuqina okuhle kokusabalala, ayikho iphuzu elicacile le-isoelectric ebangeni le-pH elingu-2 ~ 11, futhi ingasetshenziswa isikhathi eside endaweni eyinkimbinkimbi yamakhemikhali. Ayithambekele ekugqwaleni, ekugayweni noma ekuwohlokeni kokusebenza, futhi impilo yayo yokusebenza ide kakhulu kuneyezinto ezivamile zempuphu ye-nano.

4. Izici Zikagesi: Izici Ze-semiconductor, Ezifanele Insimu Ye-elekthronikhi

Impuphu ye-silicon carbide nano inezakhiwo ezinhle ze-semiconductor futhi ingeyama-semiconductor e-wide band gap. Inamandla aphezulu okuqhekeka kwensimu kagesi, ukuhamba okuphezulu kokugcwala kwama-electron kanye nokumelana nemisebe. Ingathuthukisa izakhiwo zikagesi ngokulungisa usayizi wezinhlayiya kanye nokwakheka kwazo. I-dielectric constant yayo incane, futhi ukuhanjiswa kwayo kungalungiswa ngokuya ngesidingo. Ingasetshenziswa njengezinto zokuvikela noma ithuthukiswe ekuqhutshweni ngokwelashwa kokuguqulwa, ifanele izimo ze-elekthronikhi eziphezulu njengamadivayisi e-semiconductor kanye nokupakishwa kwe-elekthronikhi. Ingenye yezinto eziyisisekelo eziyinhloko ochungechungeni lwemboni ye-silicon carbide semiconductor.

5. Izici zokucubungula: kulula ukuzihlanganisa, ezivumelana nezimo nezinqubo eziningi

Impuphu ye-silicon carbide nano inomsebenzi ophezulu wokusila. Ngaphansi kwesimo sokusila esishisayo ku-1850 ℃, ingathola ubuningi obungu-99.2% kanye namandla okugoba afinyelela ku-580 MPa, okulula ukuqiniswa. Ngesikhathi esifanayo, ihambisana kahle nezinsimbi, izinto zobumba, nezinto ze-polymer, kulula ukuhlakaza nokuhlanganisa, futhi ingasetshenziswa ngqo ngaphandle kokwelashwa okuyinkimbinkimbi kwangaphambilini. Ingahlanganiswa nezingxenye ezahlukahlukene ngezinqubo ezifana nokuhlanganiswa kwemishini kanye nokuhlanganiswa kokushiswa ngaphakathi kwendawo ukuze kulungiselelwe izinto ezihlanganisiwe ezisebenzayo kakhulu, ezifanele ubuchwepheshe obuhlukahlukene bokucubungula njengokuphrinta kwe-3D nokulungiselela ukumboza, futhi inokuguquguquka okuphezulu kakhulu kokusetshenziswa.

Ukuhlaziywa kokusetshenziswa kwe-silicon carbide nano powder emikhakheni eminingi

Ngokusekelwe ezicini zayo ezinhle kakhulu eziphelele, i-silicon carbide nano powder isetshenziswa kabanzi emikhakheni eminingi ephezulu, njenge-semiconductor, izinto ezihlanganisiwe, amandla amasha, izindiza, ukumboza ukukhiqizwa kwezimboni, ukukhiqizwa kwesimanje kanye nezinye izimo. Izicelo ezithile zimi kanje:

1. Insimu ye-semiconductor kanye ne-Electronic

Njengezinto eziyisisekelo eziyisisekelo embonini ye-silicon carbide semiconductor, i-silicon carbide nano powder iyinto eyinhloko yokusetshenziswa ekulungiseleleni ama-silicon carbide wafers namadivayisi e-semiconductor. Ubumsulwa bayo obuphezulu kanye nezici zokusatshalaliswa kosayizi wezinhlayiya ezincane kungathuthukisa ikhwalithi yokwakheka kwama-silicon carbide wafers, kusize ekulungiseleleni amadivayisi e-semiconductor anemvamisa ephezulu, amandla aphezulu, amandla aphansi, futhi kuvumelane nezimo eziphezulu njenge-5G nezimoto ezintsha zamandla. Okwamanje, izimfanelo zayo ezinhle kakhulu zokuqhuba ukushisa kanye nokushisa zingasetshenziswa njengezinto zokupakisha ze-elekthronikhi kanye nezinto zokusetshenziswa kokushisa, kuthuthukiswe ukusebenza kahle kokusatshalaliswa kokushisa kwamadivayisi kagesi futhi kwandise impilo yawo yesevisi; Ingasetshenziswa futhi ukukhiqiza amadivayisi e-optoelectronic njenge-blue light-emitting diodes, i-laser diodes, kanye nezinzwa zegesi, kukhuthazwe ukuthuthukiswa kwemboni ye-elekthronikhi ukuze kuncishiswe ukusebenza kahle kanye nokusebenza okuphezulu.

2. Insimu Yezinto Ezihlanganisiwe (Izimo Zokusebenza Eziyinhloko)

I-SiC nano powder iyisiqinisekiso sekhwalithi ephezulu senhlanganisela, esingasetshenziswa kabanzi ekuguqulweni kwe-metal matrix, i-ceramic matrix kanye ne-polymer matrix composites. Ukwengeza inani elincane le-silicon carbide nano powder (cishe u-5%) ku-metal matrix composite kungandisa ubulukhuni be-aluminium alloy, i-copper alloy nezinye izinto ngaphezu kuka-40%, kuthuthukise kakhulu amandla okudonseka kanye nokumelana nokuguguleka, futhi kusetshenziselwe ukukhiqiza imikhiqizo ephezulu njengezingxenye zezindiza, izingxenye zokuqondisa izimoto nokunye; Ezintweni ze-polymer, amapulasitiki obunjiniyela njenge-modified nylon kanye ne-polyetheretherketone (PEEK) angandisa amandla awo okudonseka ngaphezu kuka-150% kanye nokumelana nokuguguleka ngaphezu kokuphindwe kathathu, okwenza afanelekele izimo ezingagugi njengemishini yezimayini kanye nemishini yendwangu; Ezintweni ezihlanganisiwe ezisekelwe ku-ceramic, ukuqina kanye nokumelana nokushaqeka kokushisa kwe-ceramics kungathuthukiswa, okusetshenziselwa ukukhiqiza i-ceramics yesakhiwo ephezulu njenge-rotors ye-turbine yegesi ephezulu kanye nama-nozzle e-rocket.

3. Umkhakha Omusha Wamandla

Emkhakheni wamandla amasha, izimo zokusetshenziswa kwe-silicon carbide nano powder ziyaqhubeka nokukhula. Ekukhiqizweni kwamabhethri amasha wamandla, ingasetshenziswa njengesithasiselo sezinto ze-electrode ukuthuthukisa ukuhanjiswa kwebhethri kanye nokuphila komjikelezo, futhi ifanele imikhiqizo efana namabhethri e-lithium namaseli kaphethiloli; Emkhakheni we-photovoltaics, izinto zokumboza ezingasetshenziswa kumamojula we-photovoltaic zingathuthukisa ukusebenza kahle kokuguqulwa kwe-photoelectric kwamaseli e-photovoltaic futhi zithuthukise ukumelana kwawo nemisebe ye-ultraviolet nokuguga; Ngaphezu kwalokho, ingasetshenziswa futhi emishinini emisha yamandla efana nokukhiqizwa nokugcinwa kwe-hydrogen, ama-supercapacitor, njll. Ngokuzinza kwamakhemikhali okuhle kakhulu kanye nokuhanjiswa kwe-thermal, kusiza imboni entsha yamandla ukuthi ithuthuke ifinyelele ekusebenzeni kahle okuphezulu kanye nokongiwa kwamandla.

4. Eminye imikhakha esezingeni eliphezulu

Emkhakheni wezindiza, i-silicon carbide nano powder ingasetshenziswa ukukhiqiza izivikelo zokuzivikela ezisebenza kahle kakhulu kanye namadivayisi ezindiza. Ngezici zayo zokumelana nokushisa okuphezulu, ukumelana nokuguguleka kanye nokukhanya okulula, inganciphisa isisindo samadivayisi futhi ithuthukise ukuthembeka ezindaweni ezibucayi; Emkhakheni wokusebenza ngokunemba, ingasetshenziswa ukulungiselela ubulukhuni obuphezulu kanye nokugqoka okungagugi, izinto zokugaya nokupholisha, ngokusebenza kahle kokugaya okungu-12.12% ngaphezu kwe-silicon carbide yezinga le-micron, efanelekile ukugaya ngokunemba kwamathuluzi okusika kanye nezikhunta; Emkhakheni wobunjiniyela bamakhemikhali, ingasetshenziswa njengesithwali se-catalytic kanye nezinto zokuhlunga ezishisa kakhulu zokwenziwa nokuhlanza izinto zokusetshenziswa zamakhemikhali ezishisa kakhulu, ukuthuthukisa ukusebenza kahle kokusabela kanye nobumsulwa bomkhiqizo; Ngaphezu kwalokho, inekhono eliqinile lokumunca amaza e-infrared futhi ingasetshenziswa futhi ekulungiseleleni izinto ezimuncayo nezinto ezifihliwe.

Izinyathelo zokuphepha zokusebenzisa i-silicon carbide nano powder

Ukuze kusetshenziswe ngokugcwele izinzuzo zokusebenza kwe-silicon carbide nano powder futhi kwandiswe impilo yayo yesevisi, kuhlanganiswe nezici zayo kanye nezimo zokusetshenziswa, kufanele kuqashelwe ukuvalwa nokugcinwa endaweni eyomile nengena umoya ngesikhathi senqubo yokusebenzisa, ukugwema umswakama, ukuchayeka elangeni kanye nokushayisana okunamandla, ukuvimbela ukuhlangana kwezinhlayiya, ukubola, kanye nokuthinta ukuhlakazeka nokusebenza; Uma usebenzisa, kubalulekile ukukhetha imikhiqizo enobukhulu bezinhlayiya obufanele kanye nobumsulwa ngokwesimo sokusetshenziswa. Uma ukuhlakazeka kudinga ukuthuthukiswa, ukwelashwa kokuguqulwa kwendawo kungenziwa. Gqoka imishini yokuzivikela efana nama-dust masks kanye nama-goggles ngesikhathi sokusebenza ukuze ugweme ukuhogela i-powder futhi uqinisekise ukusetshenziswa okuphephile. Uma uhlanganiswa nezinye izinto, kubalulekile ukulawula isilinganiso sokwengeza ukuqinisekisa umphumela wokuhlanganiswa.

Umthengisi

I-RBOSCHCO ingumhlinzeki nomkhiqizi we-silicon carbide nanopowder othembekile womhlaba wonke onolwazi olungaphezu kweminyaka eyi-12 ekuhlinzekeni ngamakhemikhali asezingeni eliphezulu kanye nama-Nanomaterials. Le nkampani ithumela emazweni amaningi, njenge-USA, Canada, Europe, UAE, South Africa, Tanzania, Kenya, Egypt, Nigeria, Cameroon, Uganda, Turkey, Mexico, Azerbaijan Belgium, Cyprus, Czech Republic, Brazil, Chile, Argentina, Dubai, Japan, Korea, Vietnam, Thailand, Malaysia, Indonesia, Australia, Germany, France, Italy, Portugal njll. Njengomkhiqizi ohamba phambili wokuthuthukiswa kwe-nanotechnology, i-RBOSCHCO ibusa imakethe. Ithimba lethu lomsebenzi lochwepheshe linikeza izixazululo eziphelele zokusiza ukuthuthukisa ukusebenza kahle kwezimboni ezahlukene, ukudala inani, nokubhekana kalula nezinselele ezahlukahlukene. Uma ufuna i-silicon carbide nanopowder, sicela ukhululeke ukuxhumana nathi.