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General Introduction of Alumina Plate and Silicon Carbide Plate
Aluminum Nitride Plate is a functional ceramic plate made of Aluminum Nitride (AlN) ceramics. Aluminum nitride is a covalent bond compound with a hexagonal crystal structure and is an advanced ceramic material with excellent comprehensive performance. With a theoretical density of 3.26 g/cm³, it combines the high thermal conductivity of metal with the insulation and high-temperature resistance of ceramics, making it an ideal material for electronic packaging.
Silicon carbide plates are made of silicon carbide (SiC) ceramics. Silicon carbide exists in various crystal types (e.g., α-SiC, β-SiC) and is sintered to form a dense ceramic body. Its density is approximately 3.1-3.2 g/cm³, placing it in the category of ultra-high-temperature ceramic materials, characterized by extremely high hardness, wear resistance, and chemical stability, resulting in outstanding performance in extreme environments.

Difference between the characteristics of alumina plate and silicon carbide plate
Thermal conductivity and insulation
Aluminum nitride plate: thermal conductivity as high as 200-320 W/m・K, close to the aluminum metal, ceramic materials in the best thermal conductivity of one of the varieties; at the same time, has excellent electrical insulation (dielectric constant of about 9.1, volume resistivity> 10¹⁴ Ω・cm) to meet the dual requirements of high-power devices, both heat dissipation and insulation.
Silicon carbide plate: thermal conductivity of about 100-200 W/m・K, although lower than aluminum nitride, but better than most ceramics; its insulating properties with the crystal type and purity changes, part of the doped silicon carbide can be used as a semiconductor material (such as SiC power device substrate), but undoped ceramics are still insulators (volume resistivity> 10¹² Ω・cm).
High-Temperature Resistance and Mechanical Properties
Aluminum nitride plate: melting point of about 2200 ° C, good oxidation resistance at high temperatures, but the mechanical strength of the temperature increases with the rapid decline; hardness (HV) of about 1200-1500, thermal shock resistance is medium (thermal expansion coefficient of 4.5 × 10-⁶ / ° C, and the silicon-based chip with a good match).
Silicon carbide plate: melting point as high as 2700 ° C, corrosion resistance (acid, alkali, metal melt erosion); hardness (HV) of 2500-3000, second only to diamond; compressive strength of more than 4000 MPa, and high strength retention rate at high temperatures (1400 ° C when the strength of the 80% of the room temperature); low coefficient of thermal expansion (2.5-4.0 × 10-⁶ / ° C, good match with the silicon chip. Low coefficient of thermal expansion (2.5-4.0×10.0⁶/°C), excellent thermal shock resistance.
Chemical stability and processability
Aluminum nitride plate: exhibits strong resistance to the erosion of molten metals (such as aluminum and copper) but is prone to slow hydrolysis with water, generating Al(OH) ₃. Therefore, moisture-proof treatment is required. Processing requires the use of diamond tools, which is of medium difficulty.
Silicon carbide plate: resistant to strong acids, alkalis, and high-temperature oxidation, with stronger resistance to metal melt erosion. It has extremely high hardness, requiring high-precision diamond abrasives and incurring high costs.

Application difference between alumina plate and silicon carbide plate
Electronics and energy field
Aluminum nitride plate: mainly used for high-power electronic devices, heat dissipation substrate (such as 5G base station amplifier module, IGBT insulating substrate), LED chip heat dissipation bracket, semiconductor packaging shell, etc., the use of its “thermal conductivity – insulation” dual-optimal characteristics to solve the chip thermal management problems.
Silicon carbide plate: as the raw material of SiC semiconductor substrate material (4H-SiC wafers), supporting the development of third-generation wide-band semiconductor; can also be used for high-temperature power supply module heat dissipation chassis, but needs to be matched with the insulation layer.
High-temperature structures and industrial fields
Aluminum nitride plate is used in the aerospace field for high-temperature insulation parts in the engine compartment (such as sensor brackets), but its application is limited by its high-temperature strength.
Silicon carbide plate: widely used in the metallurgical industry (e.g., blast furnace lining, aluminum liquid guide tank), chemical industry (corrosion-resistant reactor lining), energy field (gas turbine combustion chamber components); in addition, as wear-resistant materials used in ceramic bearings, sealing rings, sandblasting nozzles, etc., to replace the metal material in order to extend the life.
Special Fields
Aluminum Nitride Plates: Used in the optical field as infrared window materials (transmittance 8-12 μm) to take advantage of its low moisture absorption and high light transmittance.
Silicon Carbide Plates: Candidates for high-temperature nuclear fuel casing materials in the nuclear industry, utilizing its radiation and high-temperature resistance; used in the photovoltaic industry for silicon wafer cutting guides, leveraging its abrasion resistance.

Supplier
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